On-chip ESD protection strategies for RF circuits in CMOS technology

Ming Dou Ker*, Yuan Wen Hsiao

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    4 Scopus citations

    Abstract

    Electrostatic discharge (ESD) protection design for RF circuits has been one of the key challenges to implement RF ICs in CMOS technology. On-chip ESD protection circuit at the RF I/O pads often cause unacceptable degradation to RF circuits. In this paper, ESD protection design considerations for RF circuits are addressed, and on-chip ESD protection strategies for both narrow band and broadband CMOS RF circuits are also presented and discussed.

    Original languageEnglish
    Title of host publicationICSICT-2006
    Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
    PublisherIEEE Computer Society
    Pages1680-1683
    Number of pages4
    ISBN (Print)1424401615, 9781424401611
    DOIs
    StatePublished - 2006
    EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
    Duration: 23 Oct 200626 Oct 2006

    Publication series

    NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

    Conference

    ConferenceICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
    Country/TerritoryChina
    CityShanghai
    Period23/10/0626/10/06

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