On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li; Chun Yu Lin

doi:10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

Guan Yi Li, Chun Yu Lin

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

Original language	English
Title of host publication	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	258-261
Number of pages	4
ISBN (Electronic)	9781509015702
DOIs	https://doi.org/10.1109/APCCAS.2016.7803948
State	Published - 3 Jan 2017
Event	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 - Jeju, Korea, Republic of Duration: 25 Oct 2016 → 28 Oct 2016

Publication series

Name	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

Conference

Conference	2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016
Country/Territory	Korea, Republic of
City	Jeju
Period	25/10/16 → 28/10/16

Keywords

Diode string
electrostatic discharge (ESD)
power amplifier (PA)
silicon-controlled rectifier (SCR)

Access to Document

10.1109/APCCAS.2016.7803948

Cite this

Li, G. Y., & Lin, C. Y. (2017). On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 (pp. 258-261). Article 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APCCAS.2016.7803948

@inproceedings{fee67b13fd784a40b044e9a0e24d7fef,

title = "On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration",

abstract = "To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.",

keywords = "Diode string, electrostatic discharge (ESD), power amplifier (PA), silicon-controlled rectifier (SCR)",

author = "Li, {Guan Yi} and Lin, {Chun Yu}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016 ; Conference date: 25-10-2016 Through 28-10-2016",

year = "2017",

month = jan,

day = "3",

doi = "10.1109/APCCAS.2016.7803948",

language = "English",

series = "2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "258--261",

booktitle = "2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016",

address = "美國",

}

Li, GY & Lin, CY 2017, On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. in 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016., 7803948, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Institute of Electrical and Electronics Engineers Inc., pp. 258-261, 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016, Jeju, Korea, Republic of, 25/10/16. https://doi.org/10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. / Li, Guan Yi; Lin, Chun Yu.
2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 258-261 7803948 (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

AU - Li, Guan Yi

AU - Lin, Chun Yu

PY - 2017/1/3

Y1 - 2017/1/3

N2 - To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

AB - To effectively protect the radio-frequency (RF) integrated circuits in nanoscale CMOS technology from electrostatic discharge (ESD) damages, the on-chip ESD protection circuits must be added at the pads that may be stressed by ESD. In this paper, a large-swing-tolerant ESD protection circuit is presented to protect the gigahertz large-swing power amplifier (PA). The proposed ESD protection circuit of diode string with embedded silicon-controlled rectifier (DSSCR) has been designed, fabricated, and verified in silicon chip. With the better RF performances and ESD robustness, the DSSCR can be further applied to the large-swing PA.

KW - Diode string

KW - electrostatic discharge (ESD)

KW - power amplifier (PA)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=85011024378&partnerID=8YFLogxK

U2 - 10.1109/APCCAS.2016.7803948

DO - 10.1109/APCCAS.2016.7803948

M3 - Conference contribution

AN - SCOPUS:85011024378

T3 - 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

SP - 258

EP - 261

BT - 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016

Y2 - 25 October 2016 through 28 October 2016

ER -

Li GY, Lin CY. On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration. In 2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 258-261. 7803948. (2016 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2016). doi: 10.1109/APCCAS.2016.7803948

On-chip ESD protection design for radio-frequency power amplifier with large-swing-tolerance consideration

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