ESD protection in RF integrated circuits has several considerations: low parasitic capacitance, constant input capacitance, and insensitive to substrate coupling noise. In this paper, a new ESD protection design with polysilicon diodes for RF IC applications is proposed and characterized. The proposed polysilicon diode is constructed by polysilicon layer in a general CMOS process with a central un-doped region. The polysilicon diode with variation on the width of the central un-doped region is characterized at different temperatures. An on-chip ESD protection circuit realized with the stacked polysilicon diodes to reduce the total input capacitance for GHz RF application is demonstrated.
|Original language||American English|
|Number of pages||4|
|State||Published - Apr 2001|
|Event||2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan|
Duration: 18 Apr 2001 → 20 Apr 2001
|Conference||2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings|
|Period||18/04/01 → 20/04/01|