Observations on surface morphologies and dislocations of a-plane GaN grown by metal organic chemical vapor deposition

T. S. Ko, T. C. Wang, H. G. Chen, R. C. Gao, G. S. Huang, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

Research output: Contribution to journalConference articlepeer-review

Abstract

In this study, we grew non-polar a-plane GaN thin films on r-plane sapphire using a series of growth conditions by metal-organic chemical vapor deposition. The results showed that high temperature and lowpressure conditions benefited two-dimension growth could lead to a fully coalesced a-plane GaN layer with a very smooth surface. The best surface morphology with an excellent mean roughness of 10.5 A was obtained. The different thickness AlN as a nucleation layer and the different δ/β ratio were also considered. The results revealed that the surface morphology would get worse when the thickness of nucleation layer and δ/β ratio were away from the values of optimal condition. The observation of transmission electronic microscopy shown the lowest density of threading dislocations was 1.85×1010 /cm 2.

Original languageEnglish
Pages (from-to)2510-2514
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
StatePublished - Jun 2007
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: 22 Oct 200627 Oct 2006

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