Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature

Jenn-Fang Chen; J. S. Wang; P. Y. Wang; H. Z. Wong

doi:10.1063/1.124607

Observation of abnormal capacitance-frequency behavior in In_0.12Ga_0.88As/GaAs p-i-n superlattice grown at low temperature

Jenn-Fang Chen^*, J. S. Wang, P. Y. Wang, H. Z. Wong

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Capacitance-frequency measurement is used to study In_0.12Ga_0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (E_a=0.45±0.02eV, σ=6±4 × 10^-17 cm²) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers.

Original language	English
Pages (from-to)	1092-1094
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	8
DOIs	https://doi.org/10.1063/1.124607
State	Published - 23 Aug 1999

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title = "Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature",

abstract = "Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea=0.45±0.02eV, σ=6±4 × 10-17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers.",

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AU - Chen, Jenn-Fang

AU - Wang, J. S.

AU - Wang, P. Y.

AU - Wong, H. Z.

PY - 1999/8/23

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N2 - Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea=0.45±0.02eV, σ=6±4 × 10-17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers.

AB - Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea=0.45±0.02eV, σ=6±4 × 10-17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers.

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Observation of abnormal capacitance-frequency behavior in In_0.12Ga_0.88As/GaAs p-i-n superlattice grown at low temperature

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