Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure

Hsun Wen Wang; Chi Chang Hsieh; Fang I. Lai; Shiuan-Huei Lin; Hao-Chung Kuo

doi:10.1109/PVSC.2013.6744896

Numerical study of In_0.15Ga_0.85N/GaN MQW solar cells with varying well band structure

Hsun Wen Wang, Chi Chang Hsieh, Fang I. Lai, Shiuan-Huei Lin, Hao-Chung Kuo^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The photovoltaic properties of 14 pairs In₀₁₅Ga _0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In ₀₁₅Ga_0.85N/GaN MQW solar cell had V_oc of 2.37V, J_sc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.

Original language	English
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2136-2138
Number of pages	3
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744896
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	16/06/13 → 21/06/13

Keywords

InGaN
MQW
Photovoltaic cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2013.6744896

Cite this

Wang, H. W., Hsieh, C. C., Lai, F. I., Lin, S.-H., & Kuo, H.-C. (2013). Numerical study of In_0.15Ga_0.85N/GaN MQW solar cells with varying well band structure. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2136-2138). Article 6744896 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744896

@inproceedings{436ce4df3e044b3ab4417aad635c3fa0,

title = "Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure",

abstract = "The photovoltaic properties of 14 pairs In015Ga 0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In 015Ga0.85N/GaN MQW solar cell had Voc of 2.37V, Jsc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.",

keywords = "InGaN, MQW, Photovoltaic cells",

author = "Wang, {Hsun Wen} and Hsieh, {Chi Chang} and Lai, {Fang I.} and Shiuan-Huei Lin and Hao-Chung Kuo",

year = "2013",

doi = "10.1109/PVSC.2013.6744896",

language = "English",

isbn = "9781479932993",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2136--2138",

booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",

address = "美國",

note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",

}

Wang, HW, Hsieh, CC, Lai, FI, Lin, S-H & Kuo, H-C 2013, Numerical study of In_0.15Ga_0.85N/GaN MQW solar cells with varying well band structure. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744896, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2136-2138, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/06/13. https://doi.org/10.1109/PVSC.2013.6744896

Numerical study of In_0.15Ga_0.85N/GaN MQW solar cells with varying well band structure. / Wang, Hsun Wen; Hsieh, Chi Chang; Lai, Fang I. et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2136-2138 6744896 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Numerical study of In0.15Ga0.85N/GaN MQW solar cells with varying well band structure

AU - Wang, Hsun Wen

AU - Hsieh, Chi Chang

AU - Lai, Fang I.

AU - Lin, Shiuan-Huei

AU - Kuo, Hao-Chung

PY - 2013

Y1 - 2013

N2 - The photovoltaic properties of 14 pairs In015Ga 0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In 015Ga0.85N/GaN MQW solar cell had Voc of 2.37V, Jsc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.

AB - The photovoltaic properties of 14 pairs In015Ga 0.85N/GaN multiple quantum well solar cells with varying indium composition of QW are investigated numerically. The simulation results show that smooth well structure of energy band can be reduce carrier confinement and the recombination to enhance photo-current generation. This helpful design is easy to improve carrier transport to collection. And the optimal In 015Ga0.85N/GaN MQW solar cell had Voc of 2.37V, Jsc of 0.73, and the efficiency of 0.79%, which the efficiencies is enhanced 69.2 % to reference cell.

KW - InGaN

KW - MQW

KW - Photovoltaic cells

UR - http://www.scopus.com/inward/record.url?scp=84896477635&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744896

DO - 10.1109/PVSC.2013.6744896

M3 - Conference contribution

AN - SCOPUS:84896477635

SN - 9781479932993

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 2136

EP - 2138

BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013

Y2 - 16 June 2013 through 21 June 2013

ER -

Wang HW, Hsieh CC, Lai FI, Lin SH , Kuo HC. Numerical study of In_0.15Ga_0.85N/GaN MQW solar cells with varying well band structure. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2136-2138. 6744896. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744896