Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Yu An Chen; Chia Wei Chang; Cheng-Huang Kuo

doi:10.1109/LED.2015.2478969

Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Yu An Chen, Chia Wei Chang, Cheng-Huang Kuo

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

Original language	English
Article number	7268843
Pages (from-to)	1135-1137
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	36
Issue number	11
DOIs	https://doi.org/10.1109/LED.2015.2478969
State	Published - 1 Nov 2015

Keywords

AlN
HVPE
LED
PSS

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10.1109/LED.2015.2478969

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title = "Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template",

abstract = "Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.",

keywords = "AlN, HVPE, LED, PSS",

author = "Chen, {Yu An} and Chang, {Chia Wei} and Cheng-Huang Kuo",

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AB - Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

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Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

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Keywords

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