Numerical Simulation and Experimental Analysis of Current Spreading Length in Nitride-Based Light-Emitting Diodes Prepared on 10-μm -Thick n-GaN Template

Yu An Chen, Chia Wei Chang, Cheng-Huang Kuo

Research output: Contribution to journalArticlepeer-review

Abstract

Numerical and experimental demonstrations were performed in this letter to enhance the current spreading length of nitride-based light-emitting diodes (LEDs) with a 10- μm -thick n-GaN template on an AlN/high-aspect ratio patterned sapphire substrate template via hydride vapor phase epitaxy. At an injection current of 20 mA, the output powers were 4.34 and 6.39 mW for a conventional LED and an LED with a 10- μm -thick n-GaN template, respectively. The larger LED output power is attributed to the enhanced current spreading length, which improved the heat dissipation ability and the improved crystal quality.

Original languageEnglish
Article number7268843
Pages (from-to)1135-1137
Number of pages3
JournalIeee Electron Device Letters
Volume36
Issue number11
DOIs
StatePublished - 1 Nov 2015

Keywords

  • AlN
  • HVPE
  • LED
  • PSS

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