Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/VLSIT.2010.5556180

Novel ultra-low power RRAM with good endurance and retention

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

89 Scopus citations

Abstract

We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 10⁶ cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

Original language	English
Title of host publication	2010 Symposium on VLSI Technology, VLSIT 2010
Pages	85-86
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2010.5556180
State	Published - 2010
Event	2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States Duration: 15 Jun 2010 → 17 Jun 2010

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2010 Symposium on VLSI Technology, VLSIT 2010
Country/Territory	United States
City	Honolulu, HI
Period	15/06/10 → 17/06/10

Access to Document

10.1109/VLSIT.2010.5556180

Cite this

@inproceedings{a29b7fee538e42c58d90d0597988f7bb,

title = "Novel ultra-low power RRAM with good endurance and retention",

abstract = "We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.",

author = "Cheng, {C. H.} and Albert Chin and Yeh, {F. S.}",

year = "2010",

doi = "10.1109/VLSIT.2010.5556180",

language = "English",

isbn = "9781424476374",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "85--86",

booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",

note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",

}

TY - GEN

T1 - Novel ultra-low power RRAM with good endurance and retention

AU - Cheng, C. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010

Y1 - 2010

N2 - We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

AB - We report high performance RRAM of ultra-low 4 μW set power (-3.5 μA at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4×105 at 85°C, good 106 cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.

UR - http://www.scopus.com/inward/record.url?scp=77957863654&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2010.5556180

DO - 10.1109/VLSIT.2010.5556180

M3 - Conference contribution

AN - SCOPUS:77957863654

SN - 9781424476374

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 85

EP - 86

BT - 2010 Symposium on VLSI Technology, VLSIT 2010

T2 - 2010 Symposium on VLSI Technology, VLSIT 2010

Y2 - 15 June 2010 through 17 June 2010

ER -

Novel ultra-low power RRAM with good endurance and retention

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this