Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices

Ming Cheng Lin; Chao Ta Fan; Shun Wei Tang; Tian Li Wu; Chih Fang Huang

doi:10.1109/ISPSD49238.2022.9813533

Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices

Ming Cheng Lin^*
, Chao Ta Fan
, Shun Wei Tang
, Tian Li Wu^*
, Chih Fang Huang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.

Original language	English
Title of host publication	2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	81-84
Number of pages	4
ISBN (Electronic)	9781665422017
DOIs	https://doi.org/10.1109/ISPSD49238.2022.9813533
State	Published - 2022
Event	34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada Duration: 22 May 2022 → 25 May 2022

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2022-May
ISSN (Print)	1063-6854

Conference

Conference	34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
Country/Territory	Canada
City	Vancouver
Period	22/05/22 → 25/05/22

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10.1109/ISPSD49238.2022.9813533

Cite this

Lin, M. C., Fan, C. T., Tang, S. W., Wu, T. L., & Huang, C. F. (2022). Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices. In 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (pp. 81-84). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2022-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD49238.2022.9813533

Lin, Ming Cheng ; Fan, Chao Ta ; Tang, Shun Wei et al. / Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices. 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 81-84 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{53618b621302405a93fe76fcc218f701,

title = "Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices",

abstract = "Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.",

author = "Lin, \{Ming Cheng\} and Fan, \{Chao Ta\} and Tang, \{Shun Wei\} and Wu, \{Tian Li\} and Huang, \{Chih Fang\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 ; Conference date: 22-05-2022 Through 25-05-2022",

year = "2022",

doi = "10.1109/ISPSD49238.2022.9813533",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "81--84",

booktitle = "2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022",

address = "美國",

}

Lin, MC, Fan, CT, Tang, SW, Wu, TL & Huang, CF 2022, Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices. in 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2022-May, Institute of Electrical and Electronics Engineers Inc., pp. 81-84, 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Vancouver, Canada, 22/05/22. https://doi.org/10.1109/ISPSD49238.2022.9813533

Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices. / Lin, Ming Cheng; Fan, Chao Ta; Tang, Shun Wei et al.
2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 81-84 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2022-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices

AU - Lin, Ming Cheng

AU - Fan, Chao Ta

AU - Tang, Shun Wei

AU - Wu, Tian Li

AU - Huang, Chih Fang

PY - 2022

Y1 - 2022

N2 - Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.

AB - Trapping-induced dynamic characteristics are the critical challenges for GaN power devices since they can hinder device performance, operation boundaries, and reliability in real application systems. In this work, we propose a novel topology to characterize trapping-induced dynamics in GaN power devices. Instead of the traditional pulse measurements, which are not representative for the real system operations, our approach implements continuous switching method and identifies dynamic characteristics for GaN power devices under system-like operations. Various trapping induced-dynamic characteristics for the active transistor and synchronous transistor, including dynamic Ron, dynamic Vth, and dynamic Vsd, in two different GaN power HEMTs are successfully explored toward a comprehensive evaluation of the dynamic stability under the system-like operations.

UR - https://www.scopus.com/pages/publications/85134199386

U2 - 10.1109/ISPSD49238.2022.9813533

DO - 10.1109/ISPSD49238.2022.9813533

M3 - Conference contribution

AN - SCOPUS:85134199386

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 81

EP - 84

BT - 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022

Y2 - 22 May 2022 through 25 May 2022

ER -

Lin MC, Fan CT, Tang SW, Wu TL, Huang CF. Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices. In 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 81-84. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD49238.2022.9813533

Novel Topology with Continuous Switching to Comprehensively Characterize Trapping-induced Dynamics in GaN Power Devices

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