Novel thin-film transistor with self-aligned field induced drain

Horng-Chih Lin; C. M. Yu; C. Y. Lin; K. L. Yeh; Tiao Yuan Huang; Tan Fu Lei

doi:10.1109/55.892433

Novel thin-film transistor with self-aligned field induced drain

Horng-Chih Lin, C. M. Yu, C. Y. Lin, K. L. Yeh, Tiao Yuan Huang, Tan Fu Lei

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.

Original language	English
Pages (from-to)	26-28
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	1
DOIs	https://doi.org/10.1109/55.892433
State	Published - 1 Jan 2001

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abstract = "In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.",

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AU - Yu, C. M.

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AU - Huang, Tiao Yuan

AU - Lei, Tan Fu

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AB - In this letter, a novel thin-film transistor with a self-aligned field-induced-drain (SAFID) structure is reported for the first time. The new SAFID TFT features a self-aligned sidewall spacer located on top of the drain offset region to set its effective length, and a bottom gate (or field plate) situated under the drain offset region to electrically induce the field-induced-drain (FID). So, unlike the conventional off-set-gated TFTs with their effective FID length set by two separate photolithographic masking layers, the new SAFID is totally immune to photomasking misalignment errors, while enjoying the low off-state leakage as well as high turn-on characteristics inherent in the FID structure. Polycrystalline silicon TFTs with the new SAFID structure have been successfully fabricated with significant improvement in the on/off current ratio.

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Novel thin-film transistor with self-aligned field induced drain

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