Novel selective platinum deposition on VLSI contact hole

J. B. Yeh; C. Y. CHang; J. W. Chou; K. F. Huang; M. S. Feng

doi:10.7567/SSDM.1990.C-4-1

Novel selective platinum deposition on VLSI contact hole

J. B. Yeh^*, C. Y. CHang, J. W. Chou, K. F. Huang, M. S. Feng

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm² on p⁺ diffusion layer.

Original language	English
Pages	227-230
Number of pages	4
DOIs	https://doi.org/10.7567/SSDM.1990.C-4-1
State	Published - Aug 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 22 Aug 1990 → 24 Aug 1990

Conference

Conference	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	22/08/90 → 24/08/90

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10.7567/SSDM.1990.C-4-1

Cite this

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title = "Novel selective platinum deposition on VLSI contact hole",

abstract = "The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm2 on p+ diffusion layer.",

author = "Yeh, {J. B.} and CHang, {C. Y.} and Chou, {J. W.} and Huang, {K. F.} and Feng, {M. S.}",

year = "1990",

month = aug,

doi = "10.7567/SSDM.1990.C-4-1",

language = "English",

pages = "227--230",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

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AU - Yeh, J. B.

AU - CHang, C. Y.

AU - Chou, J. W.

AU - Huang, K. F.

AU - Feng, M. S.

PY - 1990/8

Y1 - 1990/8

N2 - The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm2 on p+ diffusion layer.

AB - The non-contamination selective electroless deposition of platinum was innovated. The excellent selectivity of Pt deposition into Si contact holes of 2 μm is shown. The compositions of the deposited Pt film on (100) silicon substrate was identified by the EDAX spectrum. Only platinum and silicon detected which indicated that the deposited Pt films is clean and pure. The resistivity of the deposited platinum film is 10.8 Ω-cm. We realized a low contact resistance of 76 Ω-μm2 on p+ diffusion layer.

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U2 - 10.7567/SSDM.1990.C-4-1

DO - 10.7567/SSDM.1990.C-4-1

M3 - Paper

AN - SCOPUS:0025558547

SP - 227

EP - 230

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

Novel selective platinum deposition on VLSI contact hole

Abstract

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