Novel pH sensor based on vertical silicon nanowire electrilyte-insulator- semiconductor structure

Yi Ting Lin*, Yu Hong Yu, Tzu Chien Chang, Yu Chen, Guo Jun Zhang, Shi Yang Zhu, Chao Sung Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensor, that surface to volume ratio higher than one dimensional silicon nanowire. In this paper, a novel vertical silicon nanowire electrolyte-insulator-semiconductor (EIS) structure with an ALD-HfO2 sensing membrane is proposed for the first time for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using an HP4284A LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. A postdeposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.7 mV/pH.

Original languageEnglish
Title of host publicationISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering
Pages16-21
Number of pages6
DOIs
StatePublished - 2011
Event1st International Symposium on Bioengineering, ISOB 2011 - Singapore, Singapore
Duration: 19 Jan 201119 Jan 2011

Publication series

NameISOB 2011 - Proceedings of the 1st International Symposium ISOB 2011 - Proceedings of the 1st International Symposium on Bioengineering

Conference

Conference1st International Symposium on Bioengineering, ISOB 2011
Country/TerritorySingapore
CitySingapore
Period19/01/1119/01/11

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