Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang*, Y. C. Chen, F. S. Chang, C. Y. Lin, C. Y. Liao, Z. F. Lou, J. Y. Lee, W. C. Ray, Z. X. Li, C. C. Wang, H. C. Tseng, P. H. Chen, J. H. Tsai, M. H. Liao, T. H. Hou, C. W. Liu, P. T. Huang, P. Su, M. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Fingerprint

Dive into the research topics of 'Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance'. Together they form a unique fingerprint.

Keyphrases

Engineering

Material Science