Novel Opposite Polarity Cycling Recovery (OPCR) of HfZrO2Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance

K. Y. Hsiang*, Y. C. Chen, F. S. Chang, C. Y. Lin, C. Y. Liao, Z. F. Lou, J. Y. Lee, W. C. Ray, Z. X. Li, C. C. Wang, H. C. Tseng, P. H. Chen, J. H. Tsai, M. H. Liao, T. H. Hou, C. W. Liu, P. T. Huang, P. Su, M. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Opposite polarity cycling recovery (OPCR) is proposed for the first time to completely restore a fatigued antiferroelectric (AFE) capacitor back to its initial state, thereby extending the endurance number of switching cycles for AFE-RAM. A comprehensive model exclusive to AFE with unipolar cycling is revealed toward the prospect of unlimited endurance, and the unipolar cycling with OPCR is experimentally demonstrated to be 5.6×1011 cycles, while achieving the nondegradation and complete restoration of Pr. Furthermore, the access scheme of 1T1C AFE-RAM is presented for the proposed alternate polarity operation.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3251-3254
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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