Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Ming-Dou Ker; Tain Shun Wu

doi:10.1109/IEDM.1996.554122

Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Ming-Dou Ker^*, Tain Shun Wu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

Original language	English
Article number	5552565
Pages (from-to)	889-892
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1996.554122
State	Published - 1 Dec 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 8 Dec 1996 → 11 Dec 1996

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abstract = "A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.",

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year = "1996",

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AU - Wu, Tain Shun

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N2 - A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

AB - A novel device structure of effectively reduce the layout area of CMOS output buffers with higher ESD reliability is proposed. Experimental results have shown that the output driving (sinking) current of output buffers in per unit layout area is increased 47.7% (34.3%) by this octagon-type design. The HBM (MM) ESD robustness of this octagon-type output buffer in per unit layout area is also increased 41.5% (84.6%), as comparing to the traditional finger-type output buffer.

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M3 - Conference article

AN - SCOPUS:0030406633

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JF - Technical Digest - International Electron Devices Meeting

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ER -

Novel octagonal device structure for output transistors in deep-submicron low-voltage CMOS technology

Abstract

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