Novel InGaZnO inverters utilizing film profile engineering

Horng-Chih Lin; Ming Hung Wu; Chin Wen Chan; Rong Jhe Lyu; Tiao Yuan Huang

doi:10.7567/JJAP.54.081102

Novel InGaZnO inverters utilizing film profile engineering

Horng-Chih Lin^*, Ming Hung Wu, Chin Wen Chan, Rong Jhe Lyu, Tiao Yuan Huang

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (V_DD) of 5V.

Original language	American English
Article number	081102
Journal	Japanese journal of applied physics
Volume	54
Issue number	8
DOIs	https://doi.org/10.7567/JJAP.54.081102
State	Published - 1 Aug 2015

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title = "Novel InGaZnO inverters utilizing film profile engineering",

abstract = "In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.",

author = "Horng-Chih Lin and Wu, {Ming Hung} and Chan, {Chin Wen} and Lyu, {Rong Jhe} and Huang, {Tiao Yuan}",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

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doi = "10.7567/JJAP.54.081102",

language = "American English",

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T1 - Novel InGaZnO inverters utilizing film profile engineering

AU - Lin, Horng-Chih

AU - Wu, Ming Hung

AU - Chan, Chin Wen

AU - Lyu, Rong Jhe

AU - Huang, Tiao Yuan

PY - 2015/8/1

Y1 - 2015/8/1

N2 - In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.

AB - In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)- based inverters with a resistor- or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (VDD) of 5V.

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DO - 10.7567/JJAP.54.081102

M3 - Article

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VL - 54

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 8

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ER -

Novel InGaZnO inverters utilizing film profile engineering

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