Novel flash ion sensitive field effect transistor for chemical sensor applications

Chao Sung Lai*, Tseng Fu Lu, Jer Chyi Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Electrolyte-insulator-semiconductor (EIS) devices with programmable Sm 2O 3/Si 3N 4/SiO 2 and HfO 2/gadolinium oxide nanocrystals (Gd 2O 3-NCs)/SiO 2 structures are demonstrated for pH detection. The proposed programmable EIS sensors with multiple sensing membranes exhibit a high pH sensitivity (larger than the ideal Nernst response, 59.16 mV/pH at 25°C) owing to the hydrogen ions attraction by electrons trapped within the embedded trapping layers (Si 3N 4 and Gd 2O 3-NCs) after programming. When compared with the conventional EIS devices, the programmable EIS sensors with programming provide the possibility for the small pH fluctuation detection and can be used in future pH sensor applications owing to its high pH sensing response.

Original languageEnglish
Title of host publicationProceedings - 2011 IEEE 9th International Conference on ASIC, ASICON 2011
Pages528-530
Number of pages3
DOIs
StatePublished - 2011
Event2011 IEEE 9th International Conference on ASIC, ASICON 2011 - Xiamen, China
Duration: 25 Oct 201128 Oct 2011

Publication series

NameProceedings of International Conference on ASIC
ISSN (Print)2162-7541
ISSN (Electronic)2162-755X

Conference

Conference2011 IEEE 9th International Conference on ASIC, ASICON 2011
Country/TerritoryChina
CityXiamen
Period25/10/1128/10/11

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