Novel FD SOI devices structure for low standby power applications

Ming Wen Ma; Tien-Sheng Chao; Kuo Hsing Kao; Jyun Siang Huang; Tan Fu Lei

Novel FD SOI devices structure for low standby power applications

Ming Wen Ma^*, Tien-Sheng Chao, Kuo Hsing Kao, Jyun Siang Huang, Tan Fu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current I_off significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current I_on is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current I_on effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO₂ offset spacer can possess high driving current I_on and ultra-low leakage current I _off about 0.003 times lower than conventional SOI structure.

Original language	English
Pages	59-62
Number of pages	4
State	Published - May 2006
Event	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States Duration: 7 May 2006 → 11 May 2006

Conference

Conference	2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
Country/Territory	United States
City	Boston, MA
Period	7/05/06 → 11/05/06

Keywords

Fringing electric field
High-κ offset spacer dielectric
S/D extension shift
Silicon-on-insulator (SOI)

Cite this

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title = "Novel FD SOI devices structure for low standby power applications",

abstract = "In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.",

keywords = "Fringing electric field, High-κ offset spacer dielectric, S/D extension shift, Silicon-on-insulator (SOI)",

author = "Ma, {Ming Wen} and Tien-Sheng Chao and Kao, {Kuo Hsing} and Huang, {Jyun Siang} and Lei, {Tan Fu}",

year = "2006",

month = may,

language = "English",

pages = "59--62",

note = "2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings ; Conference date: 07-05-2006 Through 11-05-2006",

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TY - CONF

T1 - Novel FD SOI devices structure for low standby power applications

AU - Ma, Ming Wen

AU - Chao, Tien-Sheng

AU - Kao, Kuo Hsing

AU - Huang, Jyun Siang

AU - Lei, Tan Fu

PY - 2006/5

Y1 - 2006/5

N2 - In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.

AB - In this paper, full-depleted SOI devices with source/drain extension shift and high-K offset spacer were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificing simultaneously. In order to overcome this drawback, the high-κ offset spacer is used to increase the on-state driving current Ion effectively due to the enhanced vertical fringing electric field to elevate the channel voltage drop and reduce series resistance. Consequently, a nanoscale FD SOI device with 8-nm S/D extension shift and TiO2 offset spacer can possess high driving current Ion and ultra-low leakage current I off about 0.003 times lower than conventional SOI structure.

KW - Fringing electric field

KW - High-κ offset spacer dielectric

KW - S/D extension shift

KW - Silicon-on-insulator (SOI)

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M3 - Paper

AN - SCOPUS:33845337653

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T2 - 2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Y2 - 7 May 2006 through 11 May 2006

ER -

Novel FD SOI devices structure for low standby power applications

Abstract

Conference

Keywords

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