@inproceedings{3d1964be14a4452aa001ca479a2689db,
title = "Novel electrostatic discharge protection design for nanoelectronics in nanoscale CMOS technology",
abstract = "A novel electrostatic discharge (ESD) protection concept by using the already-on device is proposed to effectively protect CMOS integrated circuits (IC) in nanoscale CMOS processes against ESD stress. Such an already-on NMOS device is designed to have a threshold voltage of ∼0V, or even negative. When the IC is under the ESD zapping conditions, such already-on NMOS in CMOS IC are initially standing in the turn-on state and ready to discharge ESD current during any ESD zapping. So, such already-on NMOS has the fastest turn-on speed and the lowest trigger-on voltage to effectively protect the internal circuits with a much thinner gate oxide (∼15{\AA}) in future sub-100 nm CMOS technology. To keep such already-on devices off when the IC is under normal circuit operating condition, an on-chip negative voltage generator realized by the diodes and capacitors is used to bias the gates of such already-on devices. The proposed already-on device and the on-chip negative voltage generator are fully process-compatible to the general sub-100 nm CMOS processes.",
keywords = "CMOS integrated circuits, CMOS process, CMOS technology, Electrostatic discharge, Integrated circuit technology, MOS devices, Nanoelectronics, Nanoscale devices, Protection, Voltage",
author = "Ming-Dou Ker and Tseng, {Tang Kui}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/NANO.2003.1231018",
language = "English",
series = "Proceedings of the IEEE Conference on Nanotechnology",
publisher = "IEEE Computer Society",
pages = "737--740",
booktitle = "2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 - Proceedings",
address = "美國",
note = "2003 3rd IEEE Conference on Nanotechnology, IEEE-NANO 2003 ; Conference date: 12-08-2003 Through 14-08-2003",
}