Abstract
A novel method for depositing low-cost and high-quality electro-less plating (ELP) copper film has been realized to fabricate copper-gate thin film transistors in this work. The electro-less NiP serves as an adhesion layer on glass substrate first and then the copper films are self-aligned on it. All processes of gate electrodes are fabricated under ambient environment. Electrical characteristics of the inverse staggered amorphous silicon thin film transistors (a-TFTs) are studied comprehensively. The threshold voltage is about 3.55V and the filed mobility is up to 0.56 at VD=7.67V.
Original language | English |
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State | Published - 2009 |
Event | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan Duration: 27 Apr 2009 → 30 Apr 2009 |
Conference
Conference | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 |
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Country/Territory | Taiwan |
City | Taipei |
Period | 27/04/09 → 30/04/09 |