Novel chip standby current prediction model and ultrathin gate oxide scaling limit

Hung Der Su*, Bi Shiou Chiou, Ping Chiang Lu, Ming Hsung Chang, Kuo Hua Lee, Chih Ping Chao, Yee Chaung See, Jack Yuan Chen Sun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

In deep sub-micron technology, leakage current of the oxide layer has a severe impact on chip power consumption due to the scaling down of oxide thickness. The inverter circuit model proposed in this paper provides a simple and quick method of predicting chip standby current. This model takes into account both the conventional device-off current and the inversion gate current, as compared to the conventional approach in which the gate leakage current is small and neglected. The temperature dependence study shows that the logarithm of the device-off current is inversely proportional to temperature. From 25°C, the device-off current increases tenfold for a temperature increase of 50°C, while the inversion gate current is almost temperature independent. Hence, a more aggressive oxide scaling rule could be employed in high-performance products operated at higher temperatures under the same device-off current/inversion gate current ratio.

Original languageEnglish
Pages (from-to)59-65
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number1
DOIs
StatePublished - 2002

Keywords

  • Gate current
  • Inverter
  • Standby current
  • Temperature dependence
  • Ultrathin oxide

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