Novel bidirectional tunneling program/erase nor (binor)type flash eeprom

Evans Ching Song Yang, Cheng Jye Liu, Ming Chi Liaw*, Tien-Sheng Chao, Charles Ching Hsiang Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This paper presents a novel flash memory cell, BiNOR, suitable for fastspeed, lowpower, and highperformance application. The proposed BiNOR structure allows random access, channel FowlerNordheim (FN) tunneling program/erase in NORtype array (In the past, channel FN tunneling program/erase can only be done in NAND array). Using the designated localized Pwell structure, BiNOR realizes the hot hole free, lowpower bidirectional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in NORtype flash memory.

Original languageEnglish
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 1 Dec 1999


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