TY - JOUR
T1 - Novel bidirectional tunneling program/erase nor (binor)type flash eeprom
AU - Yang, Evans Ching Song
AU - Liu, Cheng Jye
AU - Liaw, Ming Chi
AU - Chao, Tien-Sheng
AU - Hsu, Charles Ching Hsiang
PY - 1999/12/1
Y1 - 1999/12/1
N2 - This paper presents a novel flash memory cell, BiNOR, suitable for fastspeed, lowpower, and highperformance application. The proposed BiNOR structure allows random access, channel FowlerNordheim (FN) tunneling program/erase in NORtype array (In the past, channel FN tunneling program/erase can only be done in NAND array). Using the designated localized Pwell structure, BiNOR realizes the hot hole free, lowpower bidirectional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in NORtype flash memory.
AB - This paper presents a novel flash memory cell, BiNOR, suitable for fastspeed, lowpower, and highperformance application. The proposed BiNOR structure allows random access, channel FowlerNordheim (FN) tunneling program/erase in NORtype array (In the past, channel FN tunneling program/erase can only be done in NAND array). Using the designated localized Pwell structure, BiNOR realizes the hot hole free, lowpower bidirectional channel FN tunneling program and erase, and alleviates the oxide instability induced during source erase in NORtype flash memory.
UR - http://www.scopus.com/inward/record.url?scp=33747203170&partnerID=8YFLogxK
U2 - 10.1109/16.766901
DO - 10.1109/16.766901
M3 - Article
AN - SCOPUS:0032637755
SN - 0018-9383
VL - 46
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -