Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

Evans Ching Song Yang; Cheng Jye Liu; Tien-Sheng Chao; Ming Chi Liaw; Charles Ching Hsiang Hsu

doi:10.1109/VTSA.1999.786036

Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

Evans Ching Song Yang^*, Cheng Jye Liu, Tien-Sheng Chao, Ming Chi Liaw, Charles Ching Hsiang Hsu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.

Original language	English
Pages (from-to)	207-210
Number of pages	4
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
DOIs	https://doi.org/10.1109/VTSA.1999.786036
State	Published - 1 Jan 1999
Event	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 7 Jun 1999 → 10 Jun 1999

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title = "Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM",

abstract = "This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.",

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AU - Yang, Evans Ching Song

AU - Liu, Cheng Jye

AU - Chao, Tien-Sheng

AU - Liaw, Ming Chi

AU - Hsu, Charles Ching Hsiang

PY - 1999/1/1

Y1 - 1999/1/1

N2 - This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.

AB - This paper presents a novel Bi-directional channel FN tunneling program/erase NOR (BiNOR) type flash memory cell for the reliable, fast speed, and low power operation. With the localized shallow P-well at bit-line, BiNOR realizes low power channel FN tunneling program/erase in NOR-type array architecture, which could only be done in NAND array architecture. Furthermore, the read current is largely enhanced by the 3-D conduction effect due to the designated shallow P-well.

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U2 - 10.1109/VTSA.1999.786036

DO - 10.1109/VTSA.1999.786036

M3 - Conference article

AN - SCOPUS:0032599194

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EP - 210

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Y2 - 7 June 1999 through 10 June 1999

ER -

Novel Bi-directional tunneling program/erase NOR (BiNOR) type flash EEPROM

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