@inproceedings{c7b2deacc0804192a8cae8f009cbde27,
title = "Novel BEOL InGaZnO R-load-type logic-gate technology",
abstract = "N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (>108). Functional operation of the inverters is demonstrated with this simple scheme.",
keywords = "Inverters, Thin film transistors, Resistors, Logic gates, Films, Bridge circuits, Very large scale integration",
author = "Chan, {Chin Wen} and Horng-Chih Lin and Huang, {Tiao Yuan}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; Silicon Nanoelectronics Workshop, SNW 2014 ; Conference date: 08-06-2014 Through 09-06-2014",
year = "2015",
month = dec,
day = "4",
doi = "10.1109/SNW.2014.7348596",
language = "American English",
series = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2014 Silicon Nanoelectronics Workshop, SNW 2014",
address = "United States",
}