Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

Shih Ching Chen; Ting Chang Chang; Po-Tsun Liu; Yung Chun Wu; Ping Hung Yeh; Chi Feng Weng; S. M. Sze; Chun Yen Chang; Chen Hsin Lien

doi:10.1063/1.2715443

Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

Shih Ching Chen^*, Ting Chang Chang, Po-Tsun Liu, Yung Chun Wu, Ping Hung Yeh, Chi Feng Weng, S. M. Sze, Chun Yen Chang, Chen Hsin Lien

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (Vth), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature.

Original language	English
Article number	122111
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	12
DOIs	https://doi.org/10.1063/1.2715443
State	Published - 2007

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title = "Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels",

abstract = "In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (Vth), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature.",

author = "Chen, {Shih Ching} and Chang, {Ting Chang} and Po-Tsun Liu and Wu, {Yung Chun} and Yeh, {Ping Hung} and Weng, {Chi Feng} and Sze, {S. M.} and Chang, {Chun Yen} and Lien, {Chen Hsin}",

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doi = "10.1063/1.2715443",

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volume = "90",

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T1 - Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

AU - Chen, Shih Ching

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Wu, Yung Chun

AU - Yeh, Ping Hung

AU - Weng, Chi Feng

AU - Sze, S. M.

AU - Chang, Chun Yen

AU - Lien, Chen Hsin

PY - 2007

Y1 - 2007

N2 - In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (Vth), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature.

AB - In this work, the authors study a polycrystalline silicon thin-film transistor (poly-Si TFT) with oxide/nitride/oxide (ONO) stack gate dielectrics and multiple nanowire channels for the applications of both nonvolatile silicon-oxide-nitride-oxide-silicon (SONOS) memory and switch transistor. The proposed device named as nanowire SONOS-TFT has superior electrical characteristics of a transistor such as on/off current ratio, threshold voltage (Vth), and subthreshold slope due to the good gate control ability originated from fringing electrical field effects. Moreover, the proposed device under adequate operation scheme can exhibit high program/erase efficiency and good retention time characteristics at high temperature.

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DO - 10.1063/1.2715443

M3 - Article

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SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122111

ER -

Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

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