Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals

P. H. Yeh; L. J. Chen; Po-Tsun Liu; D. Y. Wang; T. C. Chang

doi:10.1166/jnn.2007.18032

Nonvolatile memory devices with NiSi₂/CoSi₂ nanocrystals

P. H. Yeh, L. J. Chen, Po-Tsun Liu, D. Y. Wang, T. C. Chang

Department of Photonics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Metal-oxide-semiconductor structures with NiSi ₂ and CoSi ₂ nanocrystals embedded in the SiO ₂ layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO ₂ layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Original language	English
Pages (from-to)	339-343
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	7
Issue number	1
DOIs	https://doi.org/10.1166/jnn.2007.18032
State	Published - 1 Jan 2007

Keywords

CoSi2
HfO Layer
Nanocrystals
NiSi2
Nonvolatile Memory Devices

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10.1166/jnn.2007.18032

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abstract = "Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.",

keywords = "CoSi2, HfO Layer, Nanocrystals, NiSi2, Nonvolatile Memory Devices",

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T1 - Nonvolatile memory devices with NiSi2/CoSi2 nanocrystals

AU - Yeh, P. H.

AU - Chen, L. J.

AU - Liu, Po-Tsun

AU - Wang, D. Y.

AU - Chang, T. C.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

AB - Metal-oxide-semiconductor structures with NiSi 2 and CoSi 2 nanocrystals embedded in the SiO 2 layer have been fabricated. A pronounced capacitance-voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO 2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

KW - CoSi2

KW - HfO Layer

KW - Nanocrystals

KW - NiSi2

KW - Nonvolatile Memory Devices

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U2 - 10.1166/jnn.2007.18032

DO - 10.1166/jnn.2007.18032

M3 - Article

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AN - SCOPUS:34447330182

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 1

ER -

Nonvolatile memory devices with NiSi₂/CoSi₂ nanocrystals

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Keywords

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