Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Wei Ren Chen; Ting Chang Chang; Po-Tsun Liu; Jui Lung Yeh; Chun Hao Tu; Jen Chung Lou; Ching Fa Yeh; Chun Yen Chang

doi:10.1063/1.2760144

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Wei Ren Chen^*
, Ting Chang Chang
, Po-Tsun Liu
, Jui Lung Yeh
, Chun Hao Tu
, Jen Chung Lou
, Ching Fa Yeh
, Chun Yen Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

Original language	English
Article number	082103
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.2760144
State	Published - 2007

Access to Document

10.1063/1.2760144

Cite this

@article{234f2290471d42e3babfaa3a9c6dd845,

title = "Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal",

abstract = "The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.",

author = "Chen, \{Wei Ren\} and Chang, \{Ting Chang\} and Po-Tsun Liu and Yeh, \{Jui Lung\} and Tu, \{Chun Hao\} and Lou, \{Jen Chung\} and Yeh, \{Ching Fa\} and Chang, \{Chun Yen\}",

year = "2007",

doi = "10.1063/1.2760144",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

AU - Chen, Wei Ren

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yeh, Jui Lung

AU - Tu, Chun Hao

AU - Lou, Jen Chung

AU - Yeh, Ching Fa

AU - Chang, Chun Yen

PY - 2007

Y1 - 2007

N2 - The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

AB - The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

UR - https://www.scopus.com/pages/publications/34548200880

U2 - 10.1063/1.2760144

DO - 10.1063/1.2760144

M3 - Article

AN - SCOPUS:34548200880

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082103

ER -

Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Abstract

Access to Document

Other files and links

Fingerprint

Cite this