Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Wei Ren Chen*, Ting Chang Chang, Po-Tsun Liu, Jui Lung Yeh, Chun Hao Tu, Jen Chung Lou, Ching Fa Yeh, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

Original languageEnglish
Article number082103
Number of pages3
JournalApplied Physics Letters
Volume91
Issue number8
DOIs
StatePublished - 2007

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