Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal

Wei Ren Chen*, Ting Chang Chang, Po-Tsun Liu, Jui Lung Yeh, Chun Hao Tu, Jen Chung Lou, Ching Fa Yeh, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.

Original languageEnglish
Article number082103
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 2007


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