Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells

Kien-Wen Sun; T. S. Song; S. Y. Wang; C. P. Lee

doi:10.1016/S0167-9317(99)00475-X

Nonthermal carrier dynamics in Al_xGa_1-xAs/GaAs quantum wells

Kien-Wen Sun^*, T. S. Song, S. Y. Wang, C. P. Lee

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al_0.32Ga_0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥10¹⁰ cm^-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 10¹⁰ cm^-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 10¹⁰ cm^-2 in the 5 nm quantum wells.

Original language	English
Pages (from-to)	189-194
Number of pages	6
Journal	Microelectronic Engineering
Volume	51
DOIs	https://doi.org/10.1016/S0167-9317(99)00475-X
State	Published - May 2000
Event	LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices - Antalya, Turkey Duration: 15 Sep 1999 → 17 Sep 1999

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@article{d83f6400e9fc4b5788b43bb252e04d36,

title = "Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells",

abstract = "We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.",

author = "Kien-Wen Sun and Song, {T. S.} and Wang, {S. Y.} and Lee, {C. P.}",

year = "2000",

month = may,

doi = "10.1016/S0167-9317(99)00475-X",

language = "English",

volume = "51",

pages = "189--194",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

note = "LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices ; Conference date: 15-09-1999 Through 17-09-1999",

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TY - JOUR

T1 - Nonthermal carrier dynamics in AlxGa1-xAs/GaAs quantum wells

AU - Sun, Kien-Wen

AU - Song, T. S.

AU - Wang, S. Y.

AU - Lee, C. P.

PY - 2000/5

Y1 - 2000/5

N2 - We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.

AB - We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.

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U2 - 10.1016/S0167-9317(99)00475-X

DO - 10.1016/S0167-9317(99)00475-X

M3 - Conference article

AN - SCOPUS:0033722925

SN - 0167-9317

VL - 51

SP - 189

EP - 194

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices

Y2 - 15 September 1999 through 17 September 1999

ER -

Nonthermal carrier dynamics in Al_xGa_1-xAs/GaAs quantum wells

Abstract

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