Abstract
We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of highly nonequilibrium carrier distributions in the p-doped Al0.32Ga0.68As/GaAs quantum wells with well width of 5 and 3 nm. The spectra at high densities (≥1010 cm-2) demonstrate that the initially narrow electron distribution is altered in a time less than or equal to the LO phonon emission time as the result of rapid carrier-carrier scattering. At about the same excitation density (approx. 1010 cm-2), the carrier-carrier scattering rate is faster in 3 nm quantum wells in comparison to 5 nm wells. Our results also indicate that carrier-carrier scattering becomes as significant as LO phonon emission at density of about 1 × 1010 cm-2 in the 5 nm quantum wells.
Original language | English |
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Pages (from-to) | 189-194 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 51 |
DOIs | |
State | Published - May 2000 |
Event | LDSD'99: 3rd International Conference on Low Dimensional Structures and Devices - Antalya, Turkey Duration: 15 Sep 1999 → 17 Sep 1999 |