Abstract
Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.
Original language | English |
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Pages (from-to) | 1555-1560 |
Number of pages | 6 |
Journal | Optical Materials Express |
Volume | 1 |
Issue number | 8 |
DOIs | |
State | Published - 1 Dec 2011 |