Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

C. W. Chen, S. C. Hung*, C. H. Lee, C. J. Tun, Cheng-Huang Kuo, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.

Original languageEnglish
Pages (from-to)1555-1560
Number of pages6
JournalOptical Materials Express
Volume1
Issue number8
DOIs
StatePublished - 1 Dec 2011

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