Nonpolar bistable resistive switching behaviors of bismuth titanate oxide thin film

Meng Han Lin, Ming Chi Wu, Chun Chieh Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

Nonpolar bistable resistive switching behaviors of sol-gel derived bismuth titanate oxide (BTO) thin film are investigated in this study. The BTO thin film memory device without thermal treatment shows higher resistance ratio (∼ 104) than the other annealed devices. The resistive switching behavior of the Pt/BTO/LNO/Pt device is reproducible and can be traced over 100 times. Both low resistance state (ON-state) and high resistance state (OFF-state) are stable over 104 s under 0.3 V voltage stress at room temperature (RT) and 85°C. The retention behaviors of both memory states in the Pt/BTO/LNO/Pt device are very stable over 2 × 106 s at RT and 85°C, showing that the BTO thin film memory device is a good candidate for nonvolatile memory application.

Original languageEnglish
Pages (from-to)30-37
Number of pages8
JournalFerroelectrics
Volume380
Issue number1 PART 1
DOIs
StatePublished - 1 Dec 2009
Event6th Asian Meeting on Ferroelectrics, AMF-6 - Taipei, Taiwan
Duration: 2 Aug 20086 Aug 2008

Keywords

  • Bismuth titanate oxide (BTO)
  • RRAM
  • Sol-gel method

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