Nonpolar and semipolar LEDs

Yuh Renn Wu; C. Y. Huang; Yuji Zhao; James Speck

doi:10.1016/B978-0-08-101942-9.00008-3

Nonpolar and semipolar LEDs

Yuh Renn Wu^*, C. Y. Huang, Yuji Zhao, James Speck

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

7 Scopus citations

Abstract

A polarization-induced electric field fundamentally limits nitride-based LEDs grown on the c-plane. Nonpolar and semipolar LEDs have potential for superior performance through high internal quantum efficiency over a wide spectral region and low efficiency droop due to improved carrier transport and high compositional homogeneity. Nonpolar and semipolar LEDs possess unique electroluminescent characteristics such as polarized light emission and reduced wavelength shift due to the lift of degeneracy in the conduction band and mitigated quantum-confined Stark effect. In epitaxial growth, the surface morphology and defect generation mechanism on nonpolar and semipolar planes differ from those on the c-plane due to the anisotropic surface geometry and tilted slip systems. LED chips are designed to enhance the light extraction efficiency of nonpolar and semipolar LEDs grown on free-standing GaN substrates.

Original language	English
Title of host publication	Nitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publication	Materials, Technologies, and Applications: Second Edition
Publisher	Elsevier
Pages	273-295
Number of pages	23
ISBN (Electronic)	9780081019436
ISBN (Print)	9780081019429
DOIs	https://doi.org/10.1016/B978-0-08-101942-9.00008-3
State	Published - 2018

Keywords

AlGaN
Carrier transport
Droop
Epitaxy
GaN
InGaN
LED
MOCVD
Nitride
Nonpolar
QCSE
Semipolar

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10.1016/B978-0-08-101942-9.00008-3

Cite this

@inbook{0da43868ba274514a19baef5a2e2a800,

title = "Nonpolar and semipolar LEDs",

abstract = "A polarization-induced electric field fundamentally limits nitride-based LEDs grown on the c-plane. Nonpolar and semipolar LEDs have potential for superior performance through high internal quantum efficiency over a wide spectral region and low efficiency droop due to improved carrier transport and high compositional homogeneity. Nonpolar and semipolar LEDs possess unique electroluminescent characteristics such as polarized light emission and reduced wavelength shift due to the lift of degeneracy in the conduction band and mitigated quantum-confined Stark effect. In epitaxial growth, the surface morphology and defect generation mechanism on nonpolar and semipolar planes differ from those on the c-plane due to the anisotropic surface geometry and tilted slip systems. LED chips are designed to enhance the light extraction efficiency of nonpolar and semipolar LEDs grown on free-standing GaN substrates.",

keywords = "AlGaN, Carrier transport, Droop, Epitaxy, GaN, InGaN, LED, MOCVD, Nitride, Nonpolar, QCSE, Semipolar",

author = "Wu, {Yuh Renn} and Huang, {C. Y.} and Yuji Zhao and James Speck",

year = "2018",

doi = "10.1016/B978-0-08-101942-9.00008-3",

language = "English",

isbn = "9780081019429",

pages = "273--295",

booktitle = "Nitride Semiconductor Light-Emitting Diodes (LEDs)",

publisher = "Elsevier",

address = "荷蘭",

}

TY - CHAP

T1 - Nonpolar and semipolar LEDs

AU - Wu, Yuh Renn

AU - Huang, C. Y.

AU - Zhao, Yuji

AU - Speck, James

PY - 2018

Y1 - 2018

N2 - A polarization-induced electric field fundamentally limits nitride-based LEDs grown on the c-plane. Nonpolar and semipolar LEDs have potential for superior performance through high internal quantum efficiency over a wide spectral region and low efficiency droop due to improved carrier transport and high compositional homogeneity. Nonpolar and semipolar LEDs possess unique electroluminescent characteristics such as polarized light emission and reduced wavelength shift due to the lift of degeneracy in the conduction band and mitigated quantum-confined Stark effect. In epitaxial growth, the surface morphology and defect generation mechanism on nonpolar and semipolar planes differ from those on the c-plane due to the anisotropic surface geometry and tilted slip systems. LED chips are designed to enhance the light extraction efficiency of nonpolar and semipolar LEDs grown on free-standing GaN substrates.

AB - A polarization-induced electric field fundamentally limits nitride-based LEDs grown on the c-plane. Nonpolar and semipolar LEDs have potential for superior performance through high internal quantum efficiency over a wide spectral region and low efficiency droop due to improved carrier transport and high compositional homogeneity. Nonpolar and semipolar LEDs possess unique electroluminescent characteristics such as polarized light emission and reduced wavelength shift due to the lift of degeneracy in the conduction band and mitigated quantum-confined Stark effect. In epitaxial growth, the surface morphology and defect generation mechanism on nonpolar and semipolar planes differ from those on the c-plane due to the anisotropic surface geometry and tilted slip systems. LED chips are designed to enhance the light extraction efficiency of nonpolar and semipolar LEDs grown on free-standing GaN substrates.

KW - AlGaN

KW - Carrier transport

KW - Droop

KW - Epitaxy

KW - GaN

KW - InGaN

KW - LED

KW - MOCVD

KW - Nitride

KW - Nonpolar

KW - QCSE

KW - Semipolar

UR - http://www.scopus.com/inward/record.url?scp=85054385124&partnerID=8YFLogxK

U2 - 10.1016/B978-0-08-101942-9.00008-3

DO - 10.1016/B978-0-08-101942-9.00008-3

M3 - Chapter

AN - SCOPUS:85054385124

SN - 9780081019429

SP - 273

EP - 295

BT - Nitride Semiconductor Light-Emitting Diodes (LEDs)

PB - Elsevier

ER -

Nonpolar and semipolar LEDs

Abstract

Keywords

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