Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

Chi Ling Lee; Shih Chang Lee; Wei-I Lee

doi:10.1143/JJAP.45.L4

Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

Chi Ling Lee^*, Shih Chang Lee, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.

Original language	English
Pages (from-to)	L4-L7
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	1-3
DOIs	https://doi.org/10.1143/JJAP.45.L4
State	Published - 31 Jan 2006

Keywords

GaN
InGaN
Light-emitting diode
MOCVD regrowth
Surface roughness

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@article{7506d1d3c27d42d28de31ccdc3910a19,

title = "Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency",

abstract = "In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.",

keywords = "GaN, InGaN, Light-emitting diode, MOCVD regrowth, Surface roughness",

author = "Lee, {Chi Ling} and Lee, {Shih Chang} and Wei-I Lee",

year = "2006",

month = jan,

day = "31",

doi = "10.1143/JJAP.45.L4",

language = "English",

volume = "45",

pages = "L4--L7",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1-3",

}

TY - JOUR

T1 - Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

AU - Lee, Chi Ling

AU - Lee, Shih Chang

AU - Lee, Wei-I

PY - 2006/1/31

Y1 - 2006/1/31

N2 - In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.

AB - In this study, p-GaN microhillocks are grown on the top of a standard multiple-quantum-well (MQW) light-emitting diode (LED) with novel nonlithographic random masking. Such microhillocks can dramatically increase the external efficiency of the LED because of the destroyed symmetry of LED interfaces. By controlling metalorganic chemical vapor deposition (MOCVD) growth conditions, p-GaN microhillocks of various densities and sizes can be easily grown on a standard LED structure. The use of this novel method to grow microhillocks on the top of the LED can facilitate the control of the leakage current of LED compared that of the photo enhanced chemical (PEC) wet etch and inductively coupled plasma (ICP) dry etch methods.

KW - GaN

KW - InGaN

KW - Light-emitting diode

KW - MOCVD regrowth

KW - Surface roughness

UR - http://www.scopus.com/inward/record.url?scp=32044448556&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.L4

DO - 10.1143/JJAP.45.L4

M3 - Article

AN - SCOPUS:32044448556

SN - 0021-4922

VL - 45

SP - L4-L7

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 1-3

ER -

Nonlithographic random masking and regrowth of GaN microhillocks to improve light-emitting diode efficiency

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Keywords

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