This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.
|Number of pages||7|
|State||Published - 2 Oct 2003|
|Event||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States|
Duration: 20 Oct 2002 → 24 Oct 2002
|Conference||Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues|
|City||Salt Lake City, UT|
|Period||20/10/02 → 24/10/02|