Non-contact electrical characterization of high-dielectric-constant (high-k) materials

Pui Yee Hung; Brendan Foran; Tuo-Hung Hou; Alain Diebold; Xiafang Zhang; Chris Oroshiba

Non-contact electrical characterization of high-dielectric-constant (high-k) materials

Pui Yee Hung^*, Brendan Foran, Tuo-Hung Hou, Alain Diebold, Xiafang Zhang, Chris Oroshiba

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

Original language	English
Pages	219-225
Number of pages	7
State	Published - 2 Oct 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country/Territory	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

Cite this

Hung, P. Y., Foran, B., Hou, T.-H., Diebold, A., Zhang, X., & Oroshiba, C. (2003). Non-contact electrical characterization of high-dielectric-constant (high-k) materials. 219-225. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Hung, Pui Yee ; Foran, Brendan ; Hou, Tuo-Hung et al. / Non-contact electrical characterization of high-dielectric-constant (high-k) materials. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.7 p.

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abstract = "This study explores the application of non-contact electrical characterization (using Quantox{\texttrademark}) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox{\texttrademark} with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox{\texttrademark}, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox{\texttrademark} correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.",

author = "Hung, {Pui Yee} and Brendan Foran and Tuo-Hung Hou and Alain Diebold and Xiafang Zhang and Chris Oroshiba",

year = "2003",

month = oct,

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language = "English",

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Hung, PY, Foran, B, Hou, T-H, Diebold, A, Zhang, X & Oroshiba, C 2003, 'Non-contact electrical characterization of high-dielectric-constant (high-k) materials', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 219-225.

Non-contact electrical characterization of high-dielectric-constant (high-k) materials. / Hung, Pui Yee; Foran, Brendan; Hou, Tuo-Hung et al.
2003. 219-225 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Non-contact electrical characterization of high-dielectric-constant (high-k) materials

AU - Hung, Pui Yee

AU - Foran, Brendan

AU - Hou, Tuo-Hung

AU - Diebold, Alain

AU - Zhang, Xiafang

AU - Oroshiba, Chris

PY - 2003/10/2

Y1 - 2003/10/2

N2 - This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

AB - This study explores the application of non-contact electrical characterization (using Quantox™) on high-dielectric-constant (high-k) materials by comparing the equivalent oxide thickness (EOT) measured from Quantox™ with the conventional C-V EOT data. The study examines two identical batches of high-k film with various ratios of hafnium to aluminum oxide. The first batch was measured with Quantox™, and the second batch was deposited with TaN/Al electrodes to form capacitors. The EOT measured by Quantox™ correlated linearly with the conventional C-V but is thicker. The TEM analysis on the film thickness also revealed similar trend. These results possibly indicate that a reaction occurred between the high-k material and the TaN/Al electrode that led to a 'reduction' in the electrical and physical thickness of the high-k materials in the capacitor samples.

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T2 - Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues

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Hung PY, Foran B, Hou TH, Diebold A, Zhang X, Oroshiba C. Non-contact electrical characterization of high-dielectric-constant (high-k) materials. 2003. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Non-contact electrical characterization of high-dielectric-constant (high-k) materials

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