Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Liang Jyi Yan; Cheng-Huang Kuo; Jinn Kong Sheu; Ming Lun Lee; Wei Chun Tseng

doi:10.1016/j.jallcom.2011.11.106

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Liang Jyi Yan, Cheng-Huang Kuo, Jinn Kong Sheu^*, Ming Lun Lee, Wei Chun Tseng

^*Corresponding author for this work

College of Photonics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ _c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 ^-4 Ω cm ² and 2.4 × 10 ^-5 Ω cm ², respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ _c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ _c of non-alloyed Cr/Au Ohmic contacts to GaN films.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Journal of Alloys and Compounds
Volume	516
DOIs	https://doi.org/10.1016/j.jallcom.2011.11.106
State	Published - 5 Mar 2012

Keywords

Cr-Au
GaN
Nonalloyed
Ohmic

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10.1016/j.jallcom.2011.11.106

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title = "Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN",

abstract = "Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.",

keywords = "Cr-Au, GaN, Nonalloyed, Ohmic",

author = "Yan, {Liang Jyi} and Cheng-Huang Kuo and Sheu, {Jinn Kong} and Lee, {Ming Lun} and Tseng, {Wei Chun}",

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T1 - Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

AU - Yan, Liang Jyi

AU - Kuo, Cheng-Huang

AU - Sheu, Jinn Kong

AU - Lee, Ming Lun

AU - Tseng, Wei Chun

PY - 2012/3/5

Y1 - 2012/3/5

N2 - Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.

AB - Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.

KW - Cr-Au

KW - GaN

KW - Nonalloyed

KW - Ohmic

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VL - 516

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JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Abstract

Keywords

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