Non-alloyed Cr/Au Ohmic contacts to N-face and Ga-face n-GaN

Liang Jyi Yan, Cheng-Huang Kuo, Jinn Kong Sheu*, Ming Lun Lee, Wei Chun Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Non-alloyed Cr/Au Ohmic contacts on N-face and Ga-face n-GaN were studied. The specific contact resistances (ρ c) of Cr/Au contacts onto the N-face and Ga-face n-GaN were as low as 2.4 × 10 -4 Ω cm 2 and 2.4 × 10 -5 Ω cm 2, respectively. Native oxide formed on the n-GaN surface was believed to be the key factor for higher ρ c. The results of X-ray photoelectron spectroscopy confirmed that n-GaN samples with different surface polarities or treated by different chemical solutions exhibited significant differences in gallium oxide content on the surface, which led to a marked difference in the ρ c of non-alloyed Cr/Au Ohmic contacts to GaN films.

Original languageEnglish
Pages (from-to)38-40
Number of pages3
JournalJournal of Alloys and Compounds
StatePublished - 5 Mar 2012


  • Cr-Au
  • GaN
  • Nonalloyed
  • Ohmic


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