NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

Yu Chen Chen, Kuo Yu Hsiang, Min Hung Lee, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.

Original languageEnglish
Title of host publication2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350334166
DOIs
StatePublished - 2023
Event2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
Duration: 17 Apr 202320 Apr 2023

Publication series

Name2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
Country/TerritoryTaiwan
CityHsinchu
Period17/04/2320/04/23

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