@inproceedings{138c20b4e77b437a951f4cac081900d6,
title = "NLS based Modeling of Temperature-dependent Phase Transition Characteristics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides",
abstract = "In this work, we have conducted an NLS-based modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO) under low temperatures down to 80K. We have shown that the temperature-dependent phase transition behavior of the AFE/FE HZO, which is responsible for the observed temperature dependence of polarization, can be captured by our generalized NLS model. Our study indicates that the distributions of the back-switching field and the effective activation field and their distinct temperature dependences are crucial. Our model is important for HZO with certain AFE and FE properties, which can be beneficial for future memory applications.",
author = "Chen, {Yu Chen} and Hsiang, {Kuo Yu} and Lee, {Min Hung} and Pin Su",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",
year = "2023",
doi = "10.1109/VLSI-TSA/VLSI-DAT57221.2023.10133951",
language = "English",
series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",
address = "United States",
}