@inproceedings{109cfc7d2e1442039b8fcf91514ffd99,
title = "NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides",
abstract = "In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf1-xZrxO2 (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.",
author = "Chen, {Yu Chen} and Hsiang, {Kuo Yu} and Tang, {Ying Tsan} and Lee, {Min Hung} and Pin Su",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",
year = "2021",
doi = "10.1109/IEDM19574.2021.9720645",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15.4.1--15.4.4",
booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",
address = "美國",
}