Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu; Yi Teh Chou; Li Feng Teng; Fu Hai Li; Han Ping Shieh

doi:10.1063/1.3551537

Nitrogenated amorphous InGaZnO thin film transistor

Po-Tsun Liu^*, Yi Teh Chou, Li Feng Teng, Fu Hai Li, Han Ping Shieh

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

Original language	English
Article number	052102
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3551537
State	Published - 31 Jan 2011

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title = "Nitrogenated amorphous InGaZnO thin film transistor",

abstract = "This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Teng, {Li Feng} and Li, {Fu Hai} and Shieh, {Han Ping}",

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doi = "10.1063/1.3551537",

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volume = "98",

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T1 - Nitrogenated amorphous InGaZnO thin film transistor

AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Teng, Li Feng

AU - Li, Fu Hai

AU - Shieh, Han Ping

PY - 2011/1/31

Y1 - 2011/1/31

N2 - This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

AB - This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

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SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052102

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Nitrogenated amorphous InGaZnO thin film transistor

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