Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ching Wei Chen; Chao-Hsin Chien; Shih Chich Ou; Tsu Hsiu Perng; Da Yuan Lee; Yi Cheng Chen; Horng-Chih Lin; Tiao Yuan Huang; Chun Yen Chang

doi:10.1109/IWGI.2003.159183

Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Ching Wei Chen, Chao-Hsin Chien, Shih Chich Ou, Tsu Hsiu Perng, Da Yuan Lee, Yi Cheng Chen, Horng-Chih Lin, Tiao Yuan Huang, Chun Yen Chang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

Original language	English
Title of host publication	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	54-57
Number of pages	4
ISBN (Electronic)	4891140372, 9784891140373
DOIs	https://doi.org/10.1109/IWGI.2003.159183
State	Published - 1 Jan 2003
Event	International Workshop on Gate Insulator, IWGI 2003 - Tokyo, Japan Duration: 6 Nov 2003 → 7 Nov 2003

Publication series

Name	Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Conference

Conference	International Workshop on Gate Insulator, IWGI 2003
Country/Territory	Japan
City	Tokyo
Period	6/11/03 → 7/11/03

Keywords

Boron
Degradation
Dielectrics
Hot carriers
Leakage current
MOSFETs
Nitrogen
Plasmas
Tunneling
Voltage

Access to Document

10.1109/IWGI.2003.159183

Cite this

Chen, C. W., Chien, C.-H., Ou, S. C., Perng, T. H., Lee, D. Y., Chen, Y. C., Lin, H.-C., Huang, T. Y., & Chang, C. Y. (2003). Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003 (pp. 54-57). Article 1252508 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2003.159183

Chen, Ching Wei ; Chien, Chao-Hsin ; Ou, Shih Chich et al. / Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 54-57 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

@inproceedings{e759ea9264984958ad62e2ab78a897ca,

title = "Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric",

abstract = "Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.",

keywords = "Boron, Degradation, Dielectrics, Hot carriers, Leakage current, MOSFETs, Nitrogen, Plasmas, Tunneling, Voltage",

author = "Chen, {Ching Wei} and Chao-Hsin Chien and Ou, {Shih Chich} and Perng, {Tsu Hsiu} and Lee, {Da Yuan} and Chen, {Yi Cheng} and Horng-Chih Lin and Huang, {Tiao Yuan} and Chang, {Chun Yen}",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/IWGI.2003.159183",

language = "English",

series = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "54--57",

booktitle = "Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003",

address = "美國",

note = "International Workshop on Gate Insulator, IWGI 2003 ; Conference date: 06-11-2003 Through 07-11-2003",

}

Chen, CW, Chien, C-H, Ou, SC, Perng, TH, Lee, DY, Chen, YC, Lin, H-C, Huang, TY & Chang, CY 2003, Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. in Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003., 1252508, Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003, Institute of Electrical and Electronics Engineers Inc., pp. 54-57, International Workshop on Gate Insulator, IWGI 2003, Tokyo, Japan, 6/11/03. https://doi.org/10.1109/IWGI.2003.159183

Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. / Chen, Ching Wei; Chien, Chao-Hsin; Ou, Shih Chich et al.
Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 54-57 1252508 (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

AU - Chen, Ching Wei

AU - Chien, Chao-Hsin

AU - Ou, Shih Chich

AU - Perng, Tsu Hsiu

AU - Lee, Da Yuan

AU - Chen, Yi Cheng

AU - Lin, Horng-Chih

AU - Huang, Tiao Yuan

AU - Chang, Chun Yen

PY - 2003/1/1

Y1 - 2003/1/1

N2 - Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

AB - Although nitrogen incorporation into ultra-thin gate dielectrics could reduce gate leakage current effectively, in this study we found that nitrogen-induced paramagnetic electron trap precursors will enhance hot-electron-induced degradation in deep sub-micron nMOSFETs. These nitrogen-related electron traps induced by hot electron injection could eventually become a severe long-term reliability concern for sub-100 mn technology.

KW - Boron

KW - Degradation

KW - Dielectrics

KW - Hot carriers

KW - Leakage current

KW - MOSFETs

KW - Nitrogen

KW - Plasmas

KW - Tunneling

KW - Voltage

UR - http://www.scopus.com/inward/record.url?scp=84945123718&partnerID=8YFLogxK

U2 - 10.1109/IWGI.2003.159183

DO - 10.1109/IWGI.2003.159183

M3 - Conference contribution

AN - SCOPUS:84945123718

T3 - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

SP - 54

EP - 57

BT - Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Workshop on Gate Insulator, IWGI 2003

Y2 - 6 November 2003 through 7 November 2003

ER -

Chen CW, Chien CH, Ou SC, Perng TH, Lee DY, Chen YC et al. Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 54-57. 1252508. (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003). doi: 10.1109/IWGI.2003.159183

Nitrogen-related enhanced reliability degradation in nMOSFETs with 1.6 nm gate dielectric

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this