Nitrogen implantation and in situ HF vapor clean for deep submicrometer n-MOSFETs

Jiann Heng Chen*, Tan Fu Lei, Chia Lin Chen, Tien-Sheng Chao, Ying Wen, Kuag Ting Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


This work describes a high performance and reliable deep submicrometer n-channel metal oxide semiconductor field effect transistor (n-MOSFET) with ultrathin gate oxide prepared by combining nitrogen gate electrode implantation and native-oxide-free in situ HF vapor preoxidation cleaning. The results herein reveal that the performance and reliability, including the leakage current of the ultrathin gate oxide, charge-to-breakdown, drain current, transconductance, charge pumping current, stress induced leakage current, and hot carrier reliability of n-MOSFETs are all significantly improved. The enhanced reliability and performance are attributed to the native-oxide-free process, smooth interface, and reduced incorporation of As in the gate oxide which results from HF vapor cleaning and nitrogen implantation.

Original languageEnglish
Pages (from-to)G63-G69
Number of pages8
JournalJournal of the Electrochemical Society
Issue number1
StatePublished - 1 Jan 2002


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