Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

Minsoo Lee*, Dolf Landheer, Xiaohua Wu, Martin Couillard, Zhenghong Lu, Wai T. Ng, Jianhao Chen, Tien-Sheng Chao, Tanfu Lei

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2Hf (TDEAH) and either NO or O 2 as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalMaterials Research Society Symposium Proceedings
StatePublished - 1 Dec 2004
EventIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004


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