Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

Minsoo Lee; Dolf Landheer; Xiaohua Wu; Martin Couillard; Zhenghong Lu; Wai T. Ng; Jianhao Chen; Tien-Sheng Chao; Tanfu Lei

doi:10.1557/PROC-811-D7.2

Nitrogen distribution and oxidation of HfO_xN_y gate dielectrics deposited by MOCVD using [(C₂H₅) ₂N]₄Hf with NO and O₂

Minsoo Lee^*, Dolf Landheer, Xiaohua Wu, Martin Couillard, Zhenghong Lu, Wai T. Ng, Jianhao Chen, Tien-Sheng Chao, Tanfu Lei

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Ultra-thin HfO_xN_y gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C₂H₅)₂Hf (TDEAH) and either NO or O ₂ as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O₂ as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

Original language	English
Pages (from-to)	211-216
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	811
DOIs	https://doi.org/10.1557/PROC-811-D7.2
State	Published - 1 Dec 2004
Event	Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004

Access to Document

10.1557/PROC-811-D7.2

Cite this

@article{020fa217ae254ecc9fa216d977e9204e,

title = "Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2",

abstract = "Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2Hf (TDEAH) and either NO or O 2 as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.",

author = "Minsoo Lee and Dolf Landheer and Xiaohua Wu and Martin Couillard and Zhenghong Lu and Ng, {Wai T.} and Jianhao Chen and Tien-Sheng Chao and Tanfu Lei",

year = "2004",

month = dec,

day = "1",

doi = "10.1557/PROC-811-D7.2",

language = "English",

volume = "811",

pages = "211--216",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions ; Conference date: 13-04-2004 Through 16-04-2004",

}

TY - JOUR

T1 - Nitrogen distribution and oxidation of HfOxNy gate dielectrics deposited by MOCVD using [(C2H5) 2N]4Hf with NO and O2

AU - Lee, Minsoo

AU - Landheer, Dolf

AU - Wu, Xiaohua

AU - Couillard, Martin

AU - Lu, Zhenghong

AU - Ng, Wai T.

AU - Chen, Jianhao

AU - Chao, Tien-Sheng

AU - Lei, Tanfu

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2Hf (TDEAH) and either NO or O 2 as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

AB - Ultra-thin HfOxNy gate dielectric films were deposited by pulse-mode metalorganic chemical vapor deposition (MOCVD) with [(C2H5)2Hf (TDEAH) and either NO or O 2 as oxidants. Nitrogen incorporation was studied by jc-ray photoelectron spectroscopy (XPS) and spatially-resolved elemental profiles were obtained by scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS). The results indicate that nitrogen is incorporated throughout the high-k film with a higher concentration in the interface layer between the deposited layer and the Si(100) substrate. The concentration of nitrogen is increased in both layers by using NO instead of O2 as the oxidant. The N in the deposited and interface layers can be replaced by oxygen during oxygen ambient annealing at temperatures above 500°C. Films with 8 at.% nitrogen remain amorphous following vacuum annealing at temperatures up to 800 °C. By encapsulating vacuum-annealed films with amorphous Si from an e-beam evaporator prior to removal from the cluster tool, it was possible to reduce the thickness of the interface layer upon air exposure to the 0.5 nm range.

UR - http://www.scopus.com/inward/record.url?scp=12744271557&partnerID=8YFLogxK

U2 - 10.1557/PROC-811-D7.2

DO - 10.1557/PROC-811-D7.2

M3 - Conference article

AN - SCOPUS:12744271557

SN - 0272-9172

VL - 811

SP - 211

EP - 216

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions

Y2 - 13 April 2004 through 16 April 2004

ER -

Nitrogen distribution and oxidation of HfO_xN_y gate dielectrics deposited by MOCVD using [(C₂H₅) ₂N]₄Hf with NO and O₂

Abstract

Access to Document

Other files and links

Fingerprint

Cite this