Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Cheng-Huang Kuo*, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai, S. C. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.01Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalJournal of Electronic Materials
Issue number5
StatePublished - 1 Jan 2003


  • AlGaN
  • LED
  • MQW


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