Abstract
We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency.
| Original language | English |
|---|---|
| Pages (from-to) | 1901-1903 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 19 |
| Issue number | 23 |
| DOIs | |
| State | Published - 1 Dec 2007 |
Keywords
- Gallium nitride
- Indium-tin-oxide (ITO)
- Light emitting diodes
- Light-emitting diode (LED)
- Meshed light-emitting diode (LED)
- Output power
- Power generation