Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Cheng-Huang Kuo; H. C. Feng; C. W. Kuo; C. M. Chen; L. W. Wu; G. C. Chi

doi:10.1063/1.2720347

Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Cheng-Huang Kuo^*, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, G. C. Chi

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.

Original language	English
Article number	142115
Journal	Applied Physics Letters
Volume	90
Issue number	14
DOIs	https://doi.org/10.1063/1.2720347
State	Published - 2007

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abstract = "This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.",

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AU - Chen, C. M.

AU - Wu, L. W.

AU - Chi, G. C.

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AB - This investigation presents nitride-based near ultraviolet light emitting diodes (LEDs) with a meshed p-GaN layer. With 20 mA injection current, it was found that forward voltages were 3.33 and 3.39 V while output powers were 9.0 and 10.6 mW for the meshed indium-tin-oxide (ITO) LED and meshed p-GaN LED, respectively. The larger LED output power is attributed to increased light extraction efficiency.

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Nitride-based near-ultraviolet light emitting diodes with meshed p-GaN

Abstract

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