Nitride-based near-ultraviolet LEDs with an ITO transparent contact

Cheng-Huang Kuo, S. J. Chang*, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, J. M. Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Indium tin oxide (ITO) (2300nm) and Ni (5nm)/Au (10nm) films were deposited onto glass substrates, p-GaN layers, n+-InGaN/GaN short-period-superlattice (SPS) structures and near-ultraviolet (near-UV) In0.05Ga0.95N/Al0.1Ga0.9N light emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e. 86.5% at 400nm) and a reasonably small 1.2×10-3Ωcm2 specific contact resistance. It was also found that, at 20mA, the forward voltage of the near-UV LED with ITO on n+-SPS upper contact was 3.13V, which is exactly the same as that of the near-UV LED with Ni/Au on n+-SPS upper contact. Furthermore, it was found that we could achieve a 36% larger output power by using such an ITO on n+-SPS upper contact.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume106
Issue number1
DOIs
StatePublished - 15 Jan 2004

Keywords

  • InGaN/AlGaN LED
  • ITO
  • Short-period superlattice (SPS)

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