Nitride-based light-emitting diodes with p-AIInGaN surface layers

Cheng-Huang Kuo*, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

31 Scopus citations


We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original languageEnglish
Pages (from-to)2346-2349
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - 1 Oct 2005


  • InGaN/GaN
  • Light-emitting diode (LED)
  • P-AlInGaN, V-shap pits


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