Nitride-based light-emitting diodes with p-AIInGaN surface layers

Cheng-Huang Kuo; C. C. Lin; S. J. Chang; Y. P. Hsu; J. M. Tsai; W. C. Lai; P. T. Wang

doi:10.1109/TED.2005.856817

Nitride-based light-emitting diodes with p-AIInGaN surface layers

Cheng-Huang Kuo^*, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai, P. T. Wang

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

Original language	English
Pages (from-to)	2346-2349
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	10
DOIs	https://doi.org/10.1109/TED.2005.856817
State	Published - 1 Oct 2005

Keywords

InGaN/GaN
Light-emitting diode (LED)
P-AlInGaN, V-shap pits

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10.1109/TED.2005.856817

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title = "Nitride-based light-emitting diodes with p-AIInGaN surface layers",

abstract = "We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.",

keywords = "InGaN/GaN, Light-emitting diode (LED), P-AlInGaN, V-shap pits",

author = "Cheng-Huang Kuo and Lin, {C. C.} and Chang, {S. J.} and Hsu, {Y. P.} and Tsai, {J. M.} and Lai, {W. C.} and Wang, {P. T.}",

year = "2005",

month = oct,

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doi = "10.1109/TED.2005.856817",

language = "English",

volume = "52",

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journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Nitride-based light-emitting diodes with p-AIInGaN surface layers

AU - Kuo, Cheng-Huang

AU - Lin, C. C.

AU - Chang, S. J.

AU - Hsu, Y. P.

AU - Tsai, J. M.

AU - Lai, W. C.

AU - Wang, P. T.

PY - 2005/10/1

Y1 - 2005/10/1

N2 - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

AB - We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TMAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

KW - InGaN/GaN

KW - Light-emitting diode (LED)

KW - P-AlInGaN, V-shap pits

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U2 - 10.1109/TED.2005.856817

DO - 10.1109/TED.2005.856817

M3 - Article

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SN - 0018-9383

VL - 52

SP - 2346

EP - 2349

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

ER -

Nitride-based light-emitting diodes with p-AIInGaN surface layers

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Keywords

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