Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

S. J. Chang; C. S. Chang; Y. K. Su; R. W. Chuang; W. C. Lai; Cheng-Huang Kuo; Y. P. Hsu; Y. C. Lin; S. C. Shei; H. M. Lo; J. C. Ke; J. K. Sheu

doi:10.1109/LPT.2004.824667

Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

S. J. Chang^*
, C. S. Chang
, Y. K. Su
, R. W. Chuang
, W. C. Lai
, Cheng-Huang Kuo
, Y. P. Hsu
, Y. C. Lin
, S. C. Shei
, H. M. Lo
, J. C. Ke
, J. K. Sheu

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n⁺-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n⁺-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10^-3 Ω·cm². Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n⁺-SPS upper contact was slightly higher than that of the LED with Ni-Au on n⁺-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n⁺-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.

Original language	English
Pages (from-to)	1002-1004
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	16
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2004.824667
State	Published - Apr 2004

Keywords

GaN
Indium-tin-oxide (ITO)
Light-emitting diode (LED)
Short-period superlattice (SPS)

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10.1109/LPT.2004.824667

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@article{c23f2bd6fbb94276901d6a65861bd75d,

title = "Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact",

abstract = "The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2\% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30\% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.",

keywords = "GaN, Indium-tin-oxide (ITO), Light-emitting diode (LED), Short-period superlattice (SPS)",

author = "Chang, \{S. J.\} and Chang, \{C. S.\} and Su, \{Y. K.\} and Chuang, \{R. W.\} and Lai, \{W. C.\} and Cheng-Huang Kuo and Hsu, \{Y. P.\} and Lin, \{Y. C.\} and Shei, \{S. C.\} and Lo, \{H. M.\} and Ke, \{J. C.\} and Sheu, \{J. K.\}",

year = "2004",

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doi = "10.1109/LPT.2004.824667",

language = "English",

volume = "16",

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journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

AU - Chang, S. J.

AU - Chang, C. S.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Lai, W. C.

AU - Kuo, Cheng-Huang

AU - Hsu, Y. P.

AU - Lin, Y. C.

AU - Shei, S. C.

AU - Lo, H. M.

AU - Ke, J. C.

AU - Sheu, J. K.

PY - 2004/4

Y1 - 2004/4

N2 - The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.

AB - The indium-tin-oxide [ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n+-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n+-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6 × 10-3 Ω·cm2. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni-Au on n+-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n+-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs.

KW - GaN

KW - Indium-tin-oxide (ITO)

KW - Light-emitting diode (LED)

KW - Short-period superlattice (SPS)

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DO - 10.1109/LPT.2004.824667

M3 - Article

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SP - 1002

EP - 1004

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

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Keywords

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