Abstract
GaN epitaxial layers and nitride-based light-emitting diodes (LEDs) structures with a conventional single low-temperature (LT) GaN buffer layer and multiple MgxNy/GaN buffer layers were prepared by metalorganic chemical vapor deposition. It was found that crystal quality of the GaN epilayer prepared on multiple MgxNy/GaN buffer layers was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the multiple MgxNy/GaN buffer layers, it was also found that 20 mA LED output power can be enhanced by 12%, as compared to the conventional LED. Such an enhancement in output power could be attributed to the reduction of threading dislocation induced nonradiative recombination centers using 12-pairs MgxNy/GaN buffer layers. Crown
Original language | English |
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Pages (from-to) | 590-594 |
Number of pages | 5 |
Journal | Solid-State Electronics |
Volume | 54 |
Issue number | 5 |
DOIs | |
State | Published - May 2010 |
Keywords
- Dislocation
- Light-emitting diodes
- Metalorganic chemical vapor deposition
- Multiple MgN-GaN buffer layers
- Nitride