Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Cheng-Huang Kuo; Yi Keng Fu; L. C. Chang; Yu An Chen

doi:10.1109/JQE.2014.2306997

Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Cheng-Huang Kuo, Yi Keng Fu, L. C. Chang, Yu An Chen

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm², the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

Original language	English
Article number	6746061
Pages (from-to)	255-260
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	50
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2014.2306997
State	Published - 1 Apr 2014

Keywords

efficiency droop
In rich
InN/GaN
localization effect

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10.1109/JQE.2014.2306997

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@article{6257bea271e8422689b89ec7716ea02c,

title = "Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells",

abstract = "Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26\%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.",

keywords = "efficiency droop, In rich, InN/GaN, localization effect",

author = "Cheng-Huang Kuo and Fu, \{Yi Keng\} and Chang, \{L. C.\} and Chen, \{Yu An\}",

year = "2014",

month = apr,

day = "1",

doi = "10.1109/JQE.2014.2306997",

language = "English",

volume = "50",

pages = "255--260",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

AU - Kuo, Cheng-Huang

AU - Fu, Yi Keng

AU - Chang, L. C.

AU - Chen, Yu An

PY - 2014/4/1

Y1 - 2014/4/1

N2 - Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

AB - Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

KW - efficiency droop

KW - In rich

KW - InN/GaN

KW - localization effect

UR - https://www.scopus.com/pages/publications/84900670820

U2 - 10.1109/JQE.2014.2306997

DO - 10.1109/JQE.2014.2306997

M3 - Article

AN - SCOPUS:84900670820

SN - 0018-9197

VL - 50

SP - 255

EP - 260

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 4

M1 - 6746061

ER -

Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

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Keywords

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