Nitride-based blue light-emitting diodes grown with InN/GaN matrix quantum wells

Cheng-Huang Kuo, Yi Keng Fu, L. C. Chang, Yu An Chen

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm2, the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.

Original languageEnglish
Article number6746061
Pages (from-to)255-260
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number4
StatePublished - 1 Apr 2014


  • efficiency droop
  • In rich
  • InN/GaN
  • localization effect


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